inchange semiconductor isc product specification isc silicon npn power transistor 2SC3252 description low collector saturation voltage good linearity of h fe high switching speed complement to type 2sa1288 applications various inductance lamp driver s for electrical equipment inverters, converters power amplifier switching regulator, dirver absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current-continuous 3 a i cm collector current-pulse 5 a p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3252 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma; r be = 60 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 5 v v ce( sat ) collector-emitter saturation voltage i c = 1.5a; i b = 75ma 0.4 v i cbo collector cutoff current v cb = 40v; i e = 0 100 a i ebo emitter cutoff current v eb = 4v; i c = 0 100 a h fe dc current gain i c = 1a; v ce = 2v 70 280 f t current-gain?bandwidth product i c =1a; v ce = 5v 100 mhz ? h fe classifications q r s 70-140 100-200 140-280 isc website www.iscsemi.cn 2
|
